unisonic technologies co., ltd 13002ag preliminary npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r201-090.c high voltage fast switching npn power applications ? description the device is manufactured usi ng high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. the utc 13002ag is designed for use in compact fluorescent lamps. ? features * high voltage capability * low spread of dynamic parameters * very high switching speed to-92 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 13002agl-t92-a-b 13002AGP-T92-A-B to-92 e c b tape box 13002agl-t92-a-k 13002agp-t92-a-k to-92 e c b bulk (1) b: bluk, k: bulk (2) refer to pin assignment (3) t92: to-92 (4) l: lead free, p: halogen free 13002agl -t92 -a -b (1)packing type (2)pin assignment (3)package type (4)lead free ? marking
13002ag preliminary npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r201-090.c ? absolute maximum ratings (t a = 25c, unless otherwise specified) parameter symbol ratings unit collector emitter voltage (v be = 0) v ces 700 v collector emitter voltage (i b = 0) v ceo 400 v emitter base voltage (i c = 0) v ebo 9 v collector current i c 0.75 a collector peak current (t p < 5 ms) i cm 0.5 a base current i b 0.4 a base peak current (t p < 5 ms) i bm 0.75 a total dissipation at ta = 25c p d 0.95 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? theramal data parameter symbol ratings unit thermal resistance junction-ambient ja 130 c /w ? electrical characteristics (t a = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector emitter sustaining voltage (i b = 0) (note) v ceo(sus) i c = 1 ma 700 v collector emitter satura tion voltage (note) v ce(sat) i c = 0.2 a , i b = 40 ma 0.2 0.5 v i c = 0.3 a , i b = 75 ma 0.3 1 i c = 0.4 a , i b = 135 ma 0.4 1.5 base emitter saturati on voltage (note) v be(sat) i c = 0.2 a , i b = 40 ma 1 v i c = 0.3 a , i b = 75 ma 1.2 emitter cut off current (i c = 0) i ebo v eb = 9 v 1 ma collector cut off current (v be = -1.5v) i cev v ce = 700 v 250 a dc current gain h fe* i c = 0.2 a, v ce = 5 v 12 27 i c = 0.4 a, v ce = 5 v 7 20 inductive load fall time t f i c = 0.2 a , v clamp = 300 v i b1 = -i b2 = 40 ma , l = 3 mh 0.3 s note: pulsed: puls e duration = 300 s, duty cycle = 1.5 %
13002ag preliminary npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r201-090.c ? inductive load switching test circuit l c (3) i c v ce vcc i b (1) r bb(2) v bb - + i b1 (1) fast electronic switch (2) non-inductive resistor (3) fast recovery rectifier v clamp utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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